Polar phonon scattering at the Si-SiO2 interface
Polar phonon scattering at the Si-SiO2 interface
复制标题
DOI：
10.1016/s0167-9317(99)00346-9
复制
发表时间：
1999-09-01
影响因子：
2.3
通讯作者：
Koch, F
中科院分区：
文献类型：
--
作者：
L端, JQ;Koch, F
在研究退化双极型晶体管隧道电流特性中的精细结构时，我们观察到在小正向偏压下，低温下电流变化的独特光谱模式。这些结构是基极-发射极电流的阶梯式增加，在明确定义的电压序列中重复。其中，发现的复制品的间距为135 mV，相当于SiO(2)中极性光学声子的能量。我们认为这是在Si-SiO(2)界面上传输的极性声子散射的第一个证据。
In studying fine structures in the tunneling current characteristics of degraded bipolar transistors we have observed under small forward bias a unique spectral pattern of current variations at low temperature. The structures are step-like increases of the base-emitter current that repeat in well-defined voltage sequences. Among these, replicas with a spacing of 135 mV, which is equivalent to the energy of a polar optical phonon in SiO(2), are identified quite often. We believe this is the first evidence of the polar phonon scattering for transport at the Si-SiO(2) interface.