Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition
Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition
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DOI：
10.1063/1.3225157
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发表时间：
2009-09
影响因子：
4
通讯作者：
X. Ni;M. Wu;J. Lee;Xing Li;A. Baski;Ü. Özgür;H. Morkoç
中科院分区：
文献类型：
--
作者：
X. Ni;M. Wu;J. Lee;Xing Li;A. Baski;Ü. Özgür;H. Morkoç
通过使用金属有机化学气相沉积在图案化Si（112）衬底的垂直（1 '1' 1）侧壁上启动生长，证实了Si衬底上非极性（11 '00）m面GaN的概念。使用沿着[1 <$10]方向取向的条纹图案化SiNx掩模对Si（112）衬底进行湿法蚀刻以暴露{111}面。通过使用SiO2掩蔽其他Si{111}面，仅允许垂直Si（1 <$1 <$1）侧壁参与GaN生长，这导致m面GaN膜。在垂直于表面的Si（1 <$1 <$1）平面上开始的生长被允许横向和垂直地朝向完全聚结前进。InGaN双异质结构有源层生长在这些m-GaN模板上的Si表现出高出两倍的内部量子效率相比，他们的c-平面对应在相当的载流子密度。这些结果表明，一个有前途的方法，以获得高品质的非极性的m-GaN薄膜上大面积，廉价的Si衬底。
The concept of nonpolar (11¯00) m-plane GaN on Si substrates has been demonstrated by initiating growth on the vertical (1¯1¯1) sidewalls of patterned Si(112) substrates using metalorganic chemical vapor deposition. The Si(112) substrates were wet-etched to expose {111} planes using stripe-patterned SiNx masks oriented along the [1¯10] direction. Only the vertical Si(1¯1¯1) sidewalls were allowed to participate in GaN growth by masking other Si{111} planes using SiO2, which led to m-plane GaN films. Growth initiating on the Si(1¯1¯1) planes normal to the surface was allowed to advance laterally and also vertically toward full coalescence. InGaN double heterostructure active layers grown on these m-GaN templates on Si exhibited two times higher internal quantum efficiencies as compared to their c-plane counterparts at comparable carrier densities. These results demonstrate a promising method to obtain high-quality nonpolar m-GaN films on large area, inexpensive Si substrates.