Defect‐Mode Lasing with Lowered Threshold in a Three‐Layered Hetero‐Cholesteric Liquid‐Crystal Structure
Defect‐Mode Lasing with Lowered Threshold in a Three‐Layered Hetero‐Cholesteric Liquid‐Crystal Structure
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DOI:
10.1002/adma.200501438
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发表时间:
2006-01
影响因子:
29.4
通讯作者:
M. Song;N. Y. Ha;Kazuhiro Amemiya;Byoungchoo Park;Y. Takanishi;K. Ishikawa;J. Wu;S. Nishimura;T. Toyooka;H. Takezoe
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文献类型:
--
作者:
M. Song;N. Y. Ha;Kazuhiro Amemiya;Byoungchoo Park;Y. Takanishi;K. Ishikawa;J. Wu;S. Nishimura;T. Toyooka;H. Takezoe
Cholesteric liquid crystals (CLCs) are regarded as self-assembling one-dimensional (1D) photonic crystals (PCs). A helical structure is spontaneously formed to give a unique property called selective reflection; i.e., circularly polarized (CP) light having the same handedness as the CLC helix cannot propagate through the CLCs in a frequency range corresponding to the photonic bandgap (PBG). This optical property provides us with promising photonic devices. The most extensively studied property has been lasing at the PBG edge, where the photon group velocity approaches zero. Many achievements have been reported in low-molecularweight CLCs and polymeric cholesteric liquid crystals (PCLCs). For practical applications, continuous-wave lasing is desired. For this purpose, lowering the lasing threshold is indispensable, and extensive studies have been devoted to achieving this goal. In this paper, we report a novel cavity structure for defect-mode lasing with a lowered threshold. The cell used consists of three CLC layers, the middle of which contains laser dyes and has the opposite handedness helix and a narrower PBG than those layers on either side. It was found that the defect states emerge, and the photonic density of state (DOS) is resonantly enhanced when the defect mode coincides with the edge mode. The lasing from this enhanced mode was found to show a lower threshold value. In order to reduce the lasing threshold, the emission rate must be enhanced. According to Fermi’s golden rule, the emission rate xi for i optical eigenmodes is expressed by