Direct Writing of Gallium-Indium Alloy for Stretchable Electronics
Direct Writing of Gallium-Indium Alloy for Stretchable Electronics
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DOI：
10.1002/adfm.201303220
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发表时间：
2014-06-01
影响因子：
19
通讯作者：
Kramer, Rebecca K.
中科院分区：
文献类型：
--
作者：
Boley, J. William;White, Edward L.;Kramer, Rebecca K.
本文提出了一种直接写入镓铟合金的方法。展示了喷嘴内径、间隔距离、流速和由此产生的轨迹几何形状之间的关系。氧化镓层和衬底之间的相互作用对于理解液态金属的印刷行为至关重要。后退接触角和前进接触角之间的差异表明氧化物层对基底表面的粘附性强于镓-铟合金对表面的润湿性。这进一步证明了为什么可以实现诸如本文所述的迹线的自立式结构。除了直接写入过程的基本表征，一个设计算法，是概括到一系列的跟踪几何形状的开发。这种方法被应用到一个封装的应变片，显示通过50%的应变与应变因子为1.5的近似线性行为的制造。
In this paper, a direct writing method for gallium-indium alloys is presented. The relationships between nozzle inner diameter, standoff distance, flow rate, and the resulting trace geometry are demonstrated. The interaction between the gallium oxide layer and the substrate is critically important in understanding the printing behavior of the liquid metal. The difference between receding and advancing contact angles demonstrates that the adhesion of the oxide layer to the substrate surface is stronger than the wetting of the surface by the gallium-indium alloy. This further demonstrates why free-standing structures such as the traces described herein can be realized. In addition to the basic characterization of the direct writing process, a design algorithm that is generalizable to a range of trace geometries is developed. This method is applied to the fabrication of an elastomer-encapsulated strain gauge that displays an approximately linear behavior through 50% strain with a gauge factor of 1.5.