Variable range hopping in a C60 field-effect transistor
Variable range hopping in a C60 field-effect transistor
复制标题
C60 场效应晶体管中的可变范围跳变
DOI：
10.1063/1.1790036
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发表时间：
2004
影响因子：
4
通讯作者：
Y. Ochiai
中科院分区：
文献类型：
--
作者：
K. Horiuchi;S. Uchino;S. Hashii;Akira Hashimoto;Tomohiro Kato;T. Sasaki;N. Aoki;Y. Ochiai
在C_（60）场效应晶体管的低温电导中观察到了可变范围跳跃（弗赫）。我们已经研究了在453和498 K的热退火（TA）的效果，在不同的栅极电压和几个源漏分离的电导。弗赫分析表明，赝能隙中的态密度随TA温度的升高而明显降低。然而，在与电极和栅极电介质的界面处可能存在其他电荷捕获态，其也可以由TA调制。
A variable range hopping (VRH) has been observed in the low-temperature conductance of a C60 field-effect transistor. We have investigated a thermal annealing (TA) effect at 453 and 498K, on the conductance in various gate voltages and several source-drain separations. VRH analysis shows that density of states in the pseudogap clearly decreases as TA temperature increases. However, there might exist the other charge trapping states at interfaces with electrodes and gate dielectric, which could be modulated also by TA.