Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor
Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor
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DOI：
10.1063/1.3155205
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发表时间：
2009-06-08
影响因子：
4
通讯作者：
Komiyama, S.
中科院分区：
文献类型：
--
作者：
Chen, J. C.;Li, Ming-Yang;Komiyama, S.
通过探测电流通过直接在半导体量子点上制作的单电子晶体管(SET)，研究了具有两个朗道能级的半导体量子点(QD)中的库仑阻塞振荡。通过测量SET电流，绘制出点内可压缩区域之间的点内隧道事件。我们的结果表明，在封闭的电子系统中，SET可以是对局部单个电子隧穿事件非常敏感的极好的静电计。
Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.