High stability nano-multilayer resistive films
High stability nano-multilayer resistive films
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DOI：
10.1016/j.surfcoat.2005.11.009
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发表时间：
2006-06-20
影响因子：
5.4
通讯作者：
Zadvydas, M
中科院分区：
文献类型：
--
作者：
Andziulis, A;Andziuliene, B;Zadvydas, M
本文介绍了纳米多层电阻膜的沉积和后续研究的结果，该膜为高长期稳定性电阻器提供了条件，其特征在于电阻温度系数（TCR）接近于零并且需要负值，并使用经典的 Cr-Ni-Si 材料制成。该多层结构由 3-8 nm 电阻层和 1-2 nm 切片势垒绝缘体层组成，彼此间隔以防止金属颗粒垂直聚结。使用磁控溅射沉积电阻薄膜，然后通过等离子体辅助氧化隔离硅形成势垒绝缘体层。选择电阻层的成分和厚度的方式是，在从 Cr-Ni-Si (54-06-40 w/w %) 合金靶材进行磁控溅射后，我们将有足够的硅来形成 Si 非晶基体和阻挡层。但金属Cr和Ni的含量不宜过多，以避免Cr-Ni纳米颗粒析出物共生，退火后不能形成金属预期的电导率。实验结果表明，两个或三个电阻层的多层系统具有薄层电阻率R-S = 300-550 ohm/sq。可以确保TCR在+/-2 ppm K-1至-60 ppm K-1负值范围内。这些纳米多层膜的长期稳定性为 Delta R/R (t = 1000 h, T-st = 358 K)
The results of deposition and following research of nano-multilayer resistive films, provided for the high long-term stability resistors, distinguishing by temperature coefficient of resistance (TCR) around zero and necessitate negative value, and made by using classical Cr-Ni-Si material, are presented in this work. This multilayer structure consists of 3-8 nm resistive layers and 1-2 nm sliced barrier-insulator layers spaced each between another for preventing the vertical coalescence of metal grains. Resistive thin films were deposited by using magnetron sputtering and after it the barrier-insulator layers were formed by plasma-assisted oxidation of segregated silicon. Composition and thickness of the resistive layer was chosen in such a way as after the magnetron sputtering from Cr-Ni-Si (54-06-40 w/w %) alloy target, we would have enough of silicon necessary to form the Si-amorphous matrix and barrier layer as well. However, there should be not overmuch of metals Cr and Ni to avoid the intergrowth of Cr-Ni nano-grain precipitates, which should not form the metal predicted conductivity after annealing. Experimental results show that multilayer system of two or three resistive layers having sheet resistivity R-S = 300-550 ohm/sq. can ensure the TCR in a range from +/- 2 ppm K-1 up to the negative value of -60 ppm K-1. The long-term stability of these nano-multilayer films is Delta R/R (t = 1000 h, T-st = 358 K)