Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers
Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers
复制标题
基于具有自组装改性剂的聚合物栅极电介质的超低噪声有机晶体管
DOI：
10.1021/acsami.9b13056
复制
发表时间：
2019
影响因子：
9.5
通讯作者：
Sekitani Tsuyoshi
中科院分区：
文献类型：
--
作者：
Kondo Masaya;Uemura Takafumi;Ishiwari Fumitaka;Kajitani Takashi;Shoji Yoshiaki;Morita Masato;Namba Naoko;Inoue Yumi;Noda Yuki;Araki Teppei;Fukushima Takanori;Sekitani Tsuyoshi
在这项研究中，超低1/f噪声的有机薄膜晶体管（OTFT）的基础上，聚对二甲苯栅极掺杂三蝶烯（Trip）改性剂的制造。所制备的OTFT显示出最低的1/f噪声水平之间的那些先前报道的OTFT。众所周知，1/fnoise会导致模拟和数字电路中信号完整性的退化。然而，传统的OTFT仍然具有高1/fnoise水平，并且强烈影响1/fnoise的因素仍然是模糊的。本文研究了栅介质表面对1/f噪声的影响。首先，通过比较由各种沟道长度组成的OTFT，我们发现接触电阻不影响1/fnoise。第二，我们比较了聚对二甲苯OTFT的1/f噪声和陷阱态密度（陷阱DOS）方面的自组装Trip改性剂层和没有。实验表明，特定的Trip改性剂层抑制了OTFT中的浅陷阱DOS，从而导致低1/f噪声。此外，还对各种OTFT的1/f噪声水平和陷阱态密度进行了比较，结果表明，OTFT的1/f噪声与栅介质表面有很强的依赖性。最后，通过对栅介质界面的详细分析，我们得出结论，栅介质的无序性和半导体薄膜的结晶质量与浅陷阱态密度有关，而浅陷阱态密度与1/f噪声有关。
In this study, ultralow 1/fnoise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/fnoise level among those of previously reported OTFTs. It is well known that 1/fnoise causes degradation of signal integrity in analog and digital circuits. However, conventional OTFTs still possess high 1/fnoise levels, and the factors that strongly affect 1/fnoise are still ambiguous. In this work, the effect of gate dielectric surface on 1/fnoise was investigated. First, by comparing OTFTs composed of various channel lengths, we revealed that contact resistance did not affect 1/fnoise. Second, we compared parylene OTFTs with and without a self-assembled Trip modifier layer in terms of 1/fnoise and trap density of states (Trap DOS). The experiments revealed that a specific Trip modifier layer suppresses the shallow Trap DOS in the OTFTs, leading to a low 1/fnoise. Moreover, the 1/fnoise level and Trap DOS of various kinds of OTFTs were comprehensively compared, which highlighted that the 1/fnoise of OTFTs strongly depends on the gate dielectric surface. Finally, detailed analysis of the gate dielectric interface led us to conclude that the disorder of gate dielectrics and the crystalline quality of semiconductor films are related to shallow Trap DOS, which correlates with 1/fnoise.