Solid phase equilibria in the Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries
Solid phase equilibria in the Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries
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DOI：
10.1557/jmr.1986.0352
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发表时间：
1986-03
影响因子：
2.7
通讯作者：
Tsai C. Thomas;R. S. Williams
中科院分区：
文献类型：
--
作者：
Tsai C. Thomas;R. S. Williams
使用X射线粉末衍射对Au-Ga-As、Au-Ga-Sb、Au-In-As和Au-In-Sb三元化合物进行了测量，以确定哪些金属相与III-V族化合物半导体处于平衡状态。在封闭的小体积系统中（即，防止了气相产物的形成），Au不与GaAs反应，而是与所研究的其它III-V族元素反应以产生Au-III族金属间化合物和另一种含有V族元素的固相。然而，每种半导体都形成了至少有两种不同金属间化合物的伪二元系统。在这项研究中确定的体相图提供的框架内，在文献中关于在Au/III-V界面的反应产物的实验数据可以理解。
The Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternaries were surveyed using x-ray powder diffraction to determine which metallic phases exist at equilibrium with the III-V compound semiconductors. In closed, small-volume systems (i.e., formation of gas-phase products was prevented), Au does not react with GaAs but does react with the other III-V’s investigated to produce Au-group III intermetallic compounds and another solid phase containing the group V element. However, each semiconductor formed pseudobinary systems with at least two different intermetallic compounds. The bulk phase diagrams determined in this study provide frameworks within which much of the experimental data in the literature concerning the products of reactions at Au/III-V interfaces can be understood.