Growth of a two-inch GaN single crystal substrate using the Na flux method
Growth of a two-inch GaN single crystal substrate using the Na flux method
复制标题
DOI：
10.1143/jjap.45.l1136
复制
发表时间：
2006-11-01
期刊：
影响因子：
--
通讯作者：
Kitaoka, Yasuo
中科院分区：
文献类型：
--
作者：
Kawamura, Fumio;Umeda, Hidekazu;Kitaoka, Yasuo
我们使用Na助熔剂法成功地生长了直径约为2英寸的GaN单晶衬底。我们的成功是由于开发了一种用于生长大型GaN单晶的新设备。本研究中生长的晶体具有2.3 × 10（5）cm（-2）的低位错密度。二次离子质谱（西姆斯）技术表明，Na元素很难在“+”和“-”c方向上进入晶体，导致晶体中Na的浓度为4.2 × 10 ~（14）cm ~（-3）。我们成功地生长了两英寸的GaN衬底，具有低杂质含量和低位错密度，为Na熔剂法成为实际应用铺平了道路。
We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3 x 10(5) cm(-2). The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the "+" and "-" c directions, resulting in a Na concentration of 4.2 x 10(14) cm(-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.