In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope
In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope
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DOI：
10.1016/j.mssp.2022.106469
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发表时间：
2022
影响因子：
4.1
通讯作者：
M. Adachi;K. Fujiwara;R. Sekiya;H. Kobatake;M. Ohtsuka;H. Fukuyama
中科院分区：
文献类型：
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作者：
M. Adachi;K. Fujiwara;R. Sekiya;H. Kobatake;M. Ohtsuka;H. Fukuyama
本报告描述了一种使用Ga-Al溶液的原创的液相外延(LPE)技术的实现。采用蓝宝石氮化法制备了N-极性AlN薄膜作为LPE生长过程的模板。生长行为取决于达到AlN薄膜的极性反转和溶解反应的竞争平衡。因此，为了改进整个LPE工艺，准确地了解AlN薄膜在溶液中溶解的时间和方式是至关重要的。本研究通过原位观察实验研究了N-极性氮化铝薄膜在液态铝中的溶解过程以及由此产生的氮化铝生长过程。AlN薄膜的溶解温度低于生长AlN所需的温度。在这些发现的基础上，我们设计了一种LPE生长工艺，以获得均匀的AlN层，而不会溶解N-极性的AlN薄膜。最终，在氮化蓝宝石衬底上，用Ga-60mol%Al在1300℃下反应5h，成功地形成了均匀的AlN层。
This report describes the implementation of an original liquid-phase epitaxy (LPE) technique using a Ga–Al solution. An N-polar AlN thin film prepared using a sapphire nitridation method was employed as the template for the LPE growth process. The growth behavior depended on attaining a competitive balance of the polarity inversion and the dissolution reaction of the AlN thin film. Therefore, to improve the overall LPE process, it was crucial to understand exactly when and how the AlN thin film dissolved in the solution. This study investigated the dissolution of the N-polar AlN thin film into liquid Al and the resulting AlN growth through in situ observation experiments. The AlN thin film dissolved at a lower temperature than the required temperature for AlN growth. On the basis of these findings, we designed an LPE growth process to obtain a homogeneous AlN layer without the dissolution of the N-polar AlN thin film. Ultimately, a homogeneous AlN layer was successfully formed on the nitrided sapphire substrate using Ga-60mol%Al at 1300 °C for 5 h.