Microstructure of plastic zones around crack tips in silicon revealed by HVEM and AFM
Microstructure of plastic zones around crack tips in silicon revealed by HVEM and AFM
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DOI：
10.1016/j.msea.2004.05.040
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发表时间：
2004-12
期刊：
影响因子：
6.4
通讯作者：
Masaki Tanaka;K. Higashida;Tomoko Haraguchi
中科院分区：
文献类型：
--
作者：
Masaki Tanaka;K. Higashida;Tomoko Haraguchi
为了理解硅晶体中脆性-韧性急剧转变的位错过程，利用高压电子显微镜（HVEM）和原子力显微镜（AFM）研究了裂纹尖端塑性区的微观结构。用维氏压痕法在室温下对{110}硅片进行了裂纹的引入。压痕试样的温度升高到823 K以上，在压痕产生的残余应力作用下激活裂纹尖端的位错源。所观察到的裂纹从裂纹的边缘沿沿着110 °方向延伸。AFM研究发现，裂纹尖端存在两种类型的精细滑移带：一种是平行于α 112方向的滑移带，另一种是平行于α 110方向的滑移带。前者对应于所谓的铰链型塑性区，后者对应于45°剪切型塑性区。HVEM研究揭示了两种塑性区对应的位错结构特征。对每个位错进行了详细的分析，包括确定Burgers矢量的符号，以表征这些塑性区。
In order to understand the dislocation process for the sharp brittle-to-ductile transition in silicon crystals, microstructures of plastic zones around crack tips have been investigated using high-voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into {110} silicon wafers at room temperature by Vickers indentation method. The temperature of specimens indented was raised to higher than 823K to activate dislocation sources around a crack tip under the presence of residual stress due to the indentation. The crack observed was extending along the 〈110〉 direction from the edge of the indent. AFM study has revealed two types of fine slip bands around the crack tip: one type of slip bands is those parallel to 〈112〉, and another type is those parallel to the 〈110〉 direction. The former is corresponding to so-called hinge-type plastic zone, and the latter is 45°-shear-type. HVEM study has revealed the characteristics of dislocation structures corresponding to the both types of plastic zones. Detailed analyses of each dislocation, including the determination of the sign of Burgers vector, have been made to characterize those plastic zones.