Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
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DOI：
10.1088/0268-1242/15/1/306
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发表时间：
2000
影响因子：
1.9
通讯作者：
A. Rakovská;V. Berger;X. Marcadet;B. Vinter;K. Bouzehouane;D. Kaplan
中科院分区：
文献类型：
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作者：
A. Rakovská;V. Berger;X. Marcadet;B. Vinter;K. Bouzehouane;D. Kaplan
采用分子束外延技术(MBE)对与GaSb衬底匹配的InAs0.91Sb0.09晶格进行了光致发光和光电导测试。吸收、光致发光和光谱分辨DC光电导测量导致了InAs1-x SBX的禁带表达式，它是Sb含量x的函数，其中0.06<；x<；0.12，材料几乎与GaSb晶格匹配。该表达式与最近关注这一Sb含量范围的结果很好地一致，但与文献中已知的覆盖整个Sb成分范围的结果有很大偏差。在3.39微米激发光源下，用静态和时间分辨的光电导法测量了载流子寿命。我们报道了肖克利读数的极限寿命为200 ns，这表明材料的质量很高。这些光学表征技术的准确性和一致性允许对样品进行可靠的比较，并为优化生长参数提供指导。
InAs0.91 Sb0.09 lattice matched to a GaSb substrate by molecular beam epitaxy (MBE) is characterized by photoluminescence and photoconductivity measurements. Absorption, photoluminescence and spectrally resolved dc photoconductivity measurements lead to a band gap expression for InAs1-x Sbx , as a function of the Sb content x , where 0.06<x <0.12 and the material is nearly lattice matched to GaSb. The expression is in good agreement with recent results focusing on this range of Sb content, but deviates significantly from the one known from the literature and covering the entire Sb composition range. The carrier lifetime was measured by stationary and time resolved photoconductivity with an excitation source at 3.39 µm. We report Shockley-Read limited lifetimes as long as 200 ns, which indicate the high quality of the material. The accuracy and consistency of these optical characterization techniques allow a reliable comparison of samples and provide a guide for the optimization of growth parameters.