An interface diffusion process approach for the fabrication of MgB2 wire
An interface diffusion process approach for the fabrication of MgB2 wire
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DOI：
10.1088/0953-2048/19/6/l01
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发表时间：
2006-06
影响因子：
3.6
通讯作者：
K. Togano;T. Nakane;H. Fujii;H. Takeya;H. Kumakura
中科院分区：
文献类型：
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作者：
K. Togano;T. Nakane;H. Fujii;H. Takeya;H. Kumakura
我们提出了一种利用Fe-Mg合金衬底和硼（B）层之间的界面扩散反应制备MgB 2带材的新方法。Fe-Mg合金具有足够的可加工性，可变形为带状，采用层压法制备了Fe-Mg/（B（+ SiC））复合材料。在700 °C的热处理期间，Fe-Mg合金中的Mg向界面扩散，沿界面沿着形成薄的富Mg层。富Mg薄层充当MgB 2形成的Mg源，MgB 2形成进行到B层的内部。这种形成机制产生具有少得多的MgO杂质的MgB 2的致密结构，这是通过常规的管中粉末（PIT）工艺难以实现的。在B层中添加SiC与PIT工艺的情况一样，对于提高施加磁场中的临界电流密度Jc是有效的，并且在5 K和7 T下获得了3 × 104 A cm-2的Jc值，这与添加了SiC的PIT带的Jc值相当。该方法有望成为在复合材料中开发具有高质量超导层的MgB 2线材的突破。
We propose a new approach for the fabrication of MgB2 tape utilizing an interface diffusion reaction between an Fe–Mg alloy substrate and a boron (B) layer. The Fe–Mg alloy has enough workability to be deformable into a tape form, and the Fe–Mg/(B(+ SiC)) composites were prepared by a lamination method. During the heat treatment at 700 °C, the Mg in the Fe–Mg alloy diffuses towards the interface, forming a thin Mg rich layer along the interface. The Mg rich thin layer acts as a source of Mg for MgB2 formation, which proceeds to the inside of the B layer. Such a formation mechanism produces a dense structure of MgB2 with much less MgO impurity, which is difficult to achieve by the conventional powder-in-tube (PIT) process. SiC addition to the B layer is effective for improving the critical current density Jc in applied magnetic fields as in the case of the PIT process, and a Jc value of 3 × 104 A cm−2 at 5 K and 7 T has been obtained, which is comparable to that of PIT tape with SiC addition. This approach is expected to be a breakthrough in the development of MgB2 wire with a high quality superconducting layer in the composite.