Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
复制标题
用射频单电子晶体管观察亚微秒电报噪声
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
R. G.Clark
中科院分区：
文献类型：
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作者：
T. M. Buehler;D. Reilly;R. Starrett;V. Chan;A. Hamilton;A. Dzurak;R. G.Clark
电报噪声，这源于亚稳态捕获点之间的电荷切换，变得越来越重要的器件尺寸接近纳米级。对于基于电荷的量子计算，这种噪声可能导致退相干和读出保真度的损失。在这里，我们使用射频单电子晶体管（rf-SET）来探测典型的基于量子计算机架构的电报噪声。我们经常观察到微秒电报噪声，这是一个强大的功能的局部静电势所定义的表面栅极偏置。我们提出了一种方法，用于研究电报噪声使用的rf-SET和显示结果的电荷陷阱中，一个单一的电子的捕获和发射控制的偏置施加到表面栅极。
Telegraph noise, which originates from the switching of charge between metastable trapping sites, becomes increasingly important as device sizes approach the nanoscale. For charge-based quantum computing, this noise may lead to decoherence and loss of readout fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe microsecond telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.