Reversible photoinduced change of photoconductivity in amorphous chalcogenide films.
Reversible photoinduced change of photoconductivity in amorphous chalcogenide films.
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DOI：
10.1103/physrevb.42.11857
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发表时间：
1990-12
期刊：
影响因子：
--
通讯作者：
Shimakawa;Inami;Elliott
中科院分区：
文献类型：
--
作者：
Shimakawa;Inami;Elliott
Prolonged exposure to strongly absorbed light decreases the photoconductivity of well-annealed amorphous chalcogenide (Se, ${\mathrm{As}}_{2}$${\mathrm{Se}}_{3}$, and ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$) films, similar to the behavior observed in hydrogenated amorphous silicon and organic amorphous polysilanes. This change is removed by annealing near the glass transition temperature. The reversible change in photoconductivity appears to be an intrinsic effect in amorphous semiconductors. The optically induced defect-creation reactions responsible for this, and for light-induced changes in ac conductivity, are discussed in detail.
Prolonged exposure to strongly absorbed light decreases the photoconductivity of well-annealed amorphous chalcogenide (Se, ${\mathrm{As}}_{2}$${\mathrm{Se}}_{3}$, and ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$) films, similar to the behavior observed in hydrogenated amorphous silicon and organic amorphous polysilanes. This change is removed by annealing near the glass transition temperature. The reversible change in photoconductivity appears to be an intrinsic effect in amorphous semiconductors. The optically induced defect-creation reactions responsible for this, and for light-induced changes in ac conductivity, are discussed in detail.