Model for molecular‐beam‐epitaxy growth over nonplanar surfaces
Model for molecular‐beam‐epitaxy growth over nonplanar surfaces
复制标题
非平面表面上的分子束外延生长模型
DOI：
10.1063/1.341490
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发表时间：
1988
影响因子：
3.2
通讯作者：
S. Miyazawa
中科院分区：
文献类型：
--
作者：
Mitsuru Ohtsuka;S. Miyazawa
提出了一种分子束外延生长模型，用于描述在非平面、轮廓表面上形成的形态，这些表面可能由多面晶体结构组成。生长速率的各向异性是解释观察到的生长形态的主要因素。结果表明，在非平面表面上，吸附原子的迁移改变了生长表面各点的生长速率，从而影响了迁移长度范围内形貌的形成。该模型可以成功地描述生长行为，包括尖锐facet边缘的发展，因为它是根据不需要表面斜率连续性的差分（而不是微分）方程制定的。基于该模型模拟的形貌与GaAs生长的实验结果吻合。
A model for molecular‐beam‐epitaxy growth is proposed to describe the morphology formed on a nonplanar, profiled surface that may consist of multifaceted crystal structures. Anisotropy of growth rate is introduced as a main factor for explaining the observed growth morphology. We show that on the nonplanar surface, the migration of adatoms modifies the growth rate at each point of the growing surface and thus affects the formation of the morphology within the range of migration length. The model can successfully describe the growth behavior including the development of sharp facet edges, since it is formulated in terms of a difference (rather than differential) equation which does not require the continuity of surface slope. The morphology simulated on the basis of this model agrees to experimental results of GaAs growth.