Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays
Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays
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增强石墨烯器件阵列用多层六方氮化硼的大面积合成与转移
DOI：
10.1038/s41928-022-00911-x
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发表时间：
2023-02-06
影响因子：
34.3
通讯作者：
Ago, Hiroki
中科院分区：
文献类型：
--
作者：
Fukamachi, Satoru;Solis-Fernandez, Pablo;Ago, Hiroki
多层六方氮化硼（hBN）可用于保持器件结构中其他二维材料的固有物理性质。然而，将材料集成到大规模的二维异质结构中仍然具有挑战性，因为难以合成高质量的大面积多层hBN并将其与相同规模的其他二维材料层相结合。在这里，我们表明，厘米级的多层hBN可以通过化学气相沉积在铁镍合金箔上合成，然后用作衬底和石墨烯场效应晶体管中的表面保护层。我们还开发了一种集成的电化学转移和热处理方法，使我们能够创建高性能的石墨烯/hBN异质堆叠。通过常规和可扩展方法制造的石墨烯场效应晶体管阵列显示出当hBN用作绝缘衬底时室温载流子迁移率的增强，并且进一步增加-高达10的值，000 cm（2）V-1 s（-1）-当石墨烯用另一个hBN片封装时。可以使用化学气相沉积工艺在铁上生长六方氮化硼多层-镍箔，并集成到石墨烯器件的大阵列中，其表现出高达约10，000 cm（2）V-1 s（-1）的室温载流子迁移率。
Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properties of other two-dimensional materials in device structures. However, integrating the material into large-scale two-dimensional heterostructures remains challenging due to the difficulties in synthesizing high-quality large-area multilayer hBN and combining it with other two-dimensional material layers of the same scale. Here we show that centimetre-scale multilayer hBN can be synthesized on iron-nickel alloy foil by chemical vapour deposition, and then used as a substrate and as a surface-protecting layer in graphene field-effect transistors. We also develop an integrated electrochemical transfer and thermal treatment method that allows us to create high-performance graphene/hBN heterostacks. Arrays of graphene field-effect transistors fabricated by conventional and scalable methods show an enhancement in room-temperature carrier mobility when hBN is used as an insulating substrate, and a further increase-up to a value of 10,000 cm(2) V-1 s(-1)-when graphene is encapsulated with another hBN sheet.Multilayers of hexagonal boron nitride can be grown using a chemical vapour deposition process on iron-nickel foil and integrated into a large array of graphene devices that exhibit room-temperature carrier mobilities of up to around 10,000 cm(2) V-1 s(-1).