Coupling strength, coupling-induced asymmetry and shifts in the absorption spectrum in semiconductor quantum dots
Coupling strength, coupling-induced asymmetry and shifts in the absorption spectrum in semiconductor quantum dots
复制标题
半导体量子点中的耦合强度、耦合引起的不对称性和吸收光谱的变化
DOI：
10.1140/epjb/e2016-60795-1
复制
发表时间：
2016-04
影响因子：
1.6
通讯作者：
Zheng Hang
中科院分区：
文献类型：
--
作者：
Wang Qin;Lu Zhiguo;Zheng Hang
采用价带和导带能级与无限模色散量子声子耦合的标准模型，研究了耦合效应对半导体量子点光吸收谱的影响。通过推导光吸收系数的解析表达式，建立了可测量与半导体量子点本征性质之间的关系。利用该表达式，可以在较宽的参数范围内精确计算半导体量子点吸收光谱的峰位、线形、线宽和能量位移。研究了耦合强度对吸收线不对称性的影响，计算结果清楚地表明了耦合引起的吸收线不对称性。将该方法应用于GaAs量子点，所得结果与实验观测一致。
The coupling effects on the optical absorption spectrum of semiconductor quantum dots are studied by using the standard model with valence and conduction band levels coupled to dispersive quantum phonons of infinite modes. By deducing the analytical expression of the optical absorption coefficient, the relationship between the measurable quantities and the intrinsic properties of the semiconductor quantum dot is established. By this expression, the peak position, the line shape, the linewidth, and the energy shift of the absorption spectrum of semiconductor quantum dot can be calculated precisely for a wide range of parameters. The role of coupling strength as a mechanism of absorption line asymmetry is investigated, and the calculation results clearly show the coupling-induced asymmetry in the absorption line. This analytical approach is applied to GaAs quantum dot, and the results are consistent with those of experiment observations.
DOI：
10.1142/1476
发表时间：
1993-03
期刊：
--
影响因子：
--
作者：
U. Weiss
通讯作者：
U. Weiss