P-channel InGaN-HFET structure based on polarization doping
P-channel InGaN-HFET structure based on polarization doping
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基于极化掺杂的P沟道InGaN-HFET结构
DOI：
10.1109/led.2004.830285
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发表时间：
2004
影响因子：
4.9
通讯作者：
E. Kohn
中科院分区：
文献类型：
--
作者：
T. Zimmermann;M. Neuburger;M. Kunze;I. Daumiller;A. Denisenko;A. Dadgar;A. Krost;E. Kohn
提出了一种基于极化掺杂诱导二维空穴气（2DHG）的p沟道GaN基异质结场效应晶体管（HFET）概念。所采用的结构是没有外部受主掺杂的GaN-InGaN-GaN异质结构。的p沟道2DHG特性进行了验证，在低温（20 K）和电容-电压曲线的操作。霍尔测量结果表明，在66 K时，2DHG空穴迁移率为700 cm/sup 2//Vs。对于由非本征掺杂支持的最佳结构，对于0.5 /spl μ/m的栅极长度，预测模拟的输出电流约为100 mA/mm。
A p-channel GaN-based heterostructure field-effect transistor (HFET) concept based on a two-dimensional hole gas (2DHG) induced by polarization doping is presented. The structure employed is a GaN-InGaN-GaN heterostructure without external acceptor doping. The p-channel 2DHG characteristics are verified by operation at low temperature (20 K) and capacitance-voltage profiling. Hall measurements result in a positive Hall-coefficient and indicate a 2DHG hole mobility of approximately 700 cm/sup 2//Vs at 66 K. For an optimum structure supported by extrinsic doping a simulated output current of approximately 100 mA/mm is predicted for a gate length of 0.5 /spl mu/m.