Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1−xFexTe
Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1−xFexTe
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DOI：
10.1016/j.jallcom.2015.07.299
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发表时间：
2015-11
影响因子：
6.2
通讯作者：
Jindong Liu;Xiaomin Cheng;F. Tong;X. Miao
中科院分区：
文献类型：
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作者：
Jindong Liu;Xiaomin Cheng;F. Tong;X. Miao
X射线光电子能谱（XPS）和载流子输运测量用于研究Ge 1 −xFexTe薄膜在金属-绝缘体转变过程中的电子结构。价带XPS分析和输运性质表明，费米能级向下移动与Fe浓度的增加。这种位移归因于掺入的Fe原子在费米能级附近产生浅态。随温度变化的电阻率测量结果表明，Ge 1 −xFexTe薄膜在Fe浓度x大于0.1时经历了从绝缘态到金属态的转变。这种金属-绝缘体转变归因于无序诱导的安德森局域化。
X-ray photoemission spectroscopy (XPS) and carrier transport measurements were used to investigate the electronic structure of crystalline Ge1−xFexTe films across the metal-insulator transition. Both valence-band XPS analysis and transport properties indicate that the Fermi energy is shifted downward with increasing Fe concentration. This shift is ascribed to that the incorporated Fe atoms give rise to shallow states near the Fermi energy. Temperature-dependent resistivity measurements reveal that Ge1−xFexTe films undergo a transition from insulating to metallic state at Fe concentrationxabove 0.1. This metal-insulator transition is attributed to disorder-induced Anderson localization.