Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si
Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si
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DOI：
10.1109/iedm.2012.6479112
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发表时间：
2012-12
期刊：
影响因子：
--
通讯作者：
T. Egawa
中科院分区：
文献类型：
--
作者：
T. Egawa
报道了硅衬底上异质外延生长AlGaN/GaN HEMT的研究进展和特性。高温生长的AlGaN/AlN中间层和GaN/AlN应变层超晶格可以有效地提高后续GaN层的结晶度，并在Si上生长较厚的器件结构，从而获得较高的击穿电压。Si上的AlGaN/gan HEMT的击穿电压高达1402V，最新优值系数(FOM=BV2/RON)为2.6x108V2Ω-1 cm-2。
Developments of heteroepitaxial growth and characteristics of an AlGaN/GaN HEMT on a Si substrate are reported. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystallinity of a following GaN layer and for growing thick device structure on Si, which resulted in obtaining high-breakdown voltage. The AlGaN/GaN HEMT on Si exhibited the breakdown voltage as high as 1402 V with a state-of-the-art figure-of-merit (FOM = BV2/Ron) of 2.6×108 V2Ω-1cm-2.