Dangling bond electron spin‐lattice relaxation in rf‐sputtered hydrogenated amorphous silicon and silicon carbide
Dangling bond electron spin‐lattice relaxation in rf‐sputtered hydrogenated amorphous silicon and silicon carbide
复制标题
射频溅射氢化非晶硅和碳化硅中的悬挂键电子自旋晶格弛豫
DOI：
10.1063/1.97431
复制
发表时间：
1986
期刊：
影响因子：
--
通讯作者：
R. Barnes
中科院分区：
文献类型：
--
作者：
S. Dey;D. R. Torgeson;R. Barnes
电子自旋共振方法已被用于测量由射频溅射制备的氢化非晶硅和碳化硅样品中悬挂键电子的自旋晶格弛豫时间T1的温度依赖性。T1测量是在100-400 K的温度范围内通过连续波吸收模式饱和和周期性绝热通过方法的组合进行的，产生了与两能级系统弛豫一致的T−11 <$T2行为。
Electron spin resonance methods have been used to measure the temperature dependence of the spin‐lattice relaxation time T1 of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T1 measurements were made by a combination of continuous‐wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100–400 K, yielding T−11∝T2 behavior consistent with relaxation by two‐level systems.