Verification of Threshold Voltage Variation of Scaled Transistors with Ultralarge-Scale Device Matrix Array Test Element Group
Verification of Threshold Voltage Variation of Scaled Transistors with Ultralarge-Scale Device Matrix Array Test Element Group
复制标题
使用超大规模器件矩阵阵列测试元件组验证按比例缩小的晶体管的阈值电压变化
DOI：
10.1143/jjap.48.124505
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发表时间：
2009
影响因子：
1.5
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
T. Tsunomura;A. Nishida;T. Hiramoto
精确研究了65纳米技术中负沟道场效应晶体管（NFET）和正沟道场效应晶体管（PFET）阈值电压（VT）变化的随机性。为此，设计并制造了一个包含100万个单一尺寸金属 - 氧化物 - 半导体场效应晶体管（MOSFET）的超大规模器件矩阵阵列测试单元组（DMA - TEG），并开发了一种非常快速的测量系统。通过评估大量MOSFET的VT，可以精确评估VT的变化。这种快速测量是通过并行地址信号输入、测量程序的优化以及4芯片并行测量实现的。所测量的VT变化被分解为随机和系统性成分。结果表明，在65纳米技术的VT变化中，随机成分占绝对主导地位，并且VT变化呈现出高达±5σ的正态分布。
Randomness of threshold voltage (VT) variations of negative channel field effect transistors (NFETs) and positive channel field effect transistors (PFETs) in the 65 nm technology is precisely examined. For this purpose, an ultralarge-scale device matrix array test element group (DMA-TEG) that contains 1 million single-size metal–oxide–semiconductor field-effect transistors (MOSFETs) has been designed and fabricated, and a very rapid measurement system has been developed. By evaluating VT of a very large number of MOSFETs, VT variation can be precisely evaluated. This rapid measurement is achieved by parallel address signal input, optimization of the measurement program, and 4-chip parallel measurements. The measured VT variations are decomposed into random and systematic components. The results reveal that the random component is overwhelmingly dominant in the VT variations in the 65 nm technology and that the VT variations exhibit a normal distribution up to ±5σ.