Emerging Applications of III‐Nitride Nanocrystals
Emerging Applications of III‐Nitride Nanocrystals
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DOI：
10.1002/pssa.201900885
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发表时间：
2020-02
期刊：
影响因子：
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通讯作者：
Xianhe Liu;F. Chowdhury;S. Vanka;Sheng Chu;Z. Mi
中科院分区：
文献类型：
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作者：
Xianhe Liu;F. Chowdhury;S. Vanka;Sheng Chu;Z. Mi
近年来，III-氮化物纳米晶的研究取得了重大进展。它们具有独特的结构、电子、光学和光催化性能，已成为实现高性能光电子、电子、量子和太阳能器件的功能平台。与传统的III-氮化物外延层和量子阱相比，由于有效的表面应变弛豫，原则上可以在晶格失配的异质衬底上获得无位错的III-氮化物纳米晶。在这篇专题文章中，作者讨论了等离子体辅助分子束外延生长的III-氮化物纳米晶体的外延、特性和一些新兴的器件应用。
Recently, significant progress has been made in III‐nitride nanocrystals. They exhibit unique structural, electronic, optical, and photocatalytic properties, and have emerged as a functional platform to realize high‐performance optoelectronic, electronic, quantum, and solar energy devices. Compared with conventional III‐nitride epilayers and quantum wells, dislocation‐free III‐nitride nanocrystals can, in principle, be achieved on lattice mismatched foreign substrates due to the efficient surface strain relaxation. In this Feature Article, the authors discuss the epitaxy, characteristics, and some emerging device applications of III‐nitride nanocrystals grown by plasma‐assisted molecular beam epitaxy.