Electronic Transitions in Conformationally Controlled Peralkylated Hexasilanes
Electronic Transitions in Conformationally Controlled Peralkylated Hexasilanes
复制标题
构象控制的全烷基化六硅烷中的电子跃迁
DOI:
10.1002/cphc.201600633
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发表时间:
2016
期刊:
影响因子:
2.9
通讯作者:
Michl, Josef
中科院分区:
文献类型:
--
作者:
Kanazawa, Yuki;Tsuji, Hayato;Ehara, Masahiro;Fukuda, Ryoichi;Casher, Deborah L.;Tamao, Kohei;Nakatsuji, Hiroshi;Michl, Josef
The photophysical properties of oligosilanes show unique conformational dependence due to σ‐electron delocalization. The excited states of the SAS, AAS, and AEA conformations of peralkylatedn‐hexasilanes, in which the SiSiSiSi dihedral angles are controlled into asyn(S),anti(A), oreclipsed(E) conformation, were investigated by using UV absorption, magnetic circular dichroism (MCD), and linear dichroism spectroscopy. Simultaneous Gaussian fitting of all three spectra identified a minimal set of transitions and the wavenumbers, oscillator strengths, and MCDBterms in all three compounds. The results compare well with those obtained by using the symmetry‐adapted‐cluster configuration interaction method and almost as well with those obtained by time‐dependent density functional theory with the PBE0 functional. The conformational dependence of the transition energies and other properties of free‐chain permethylatedn‐hexasilane,n‐Si6Me14, was also examined as a function of dihedral angles, and the striking effects found were attributed to avoided crossings between configurations of σσ* and σπ* character.