Controllable Co‐segregation Synthesis of Wafer‐Scale Hexagonal Boron Nitride Thin Films
Controllable Co‐segregation Synthesis of Wafer‐Scale Hexagonal Boron Nitride Thin Films
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DOI：
10.1002/adma.201304301
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发表时间：
2014-03
影响因子：
29.4
通讯作者：
Chaohua Zhang;L. Fu;Shuli Zhao;Yu Zhou;H. Peng;Zhongfan Liu
中科院分区：
文献类型：
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作者：
Chaohua Zhang;L. Fu;Shuli Zhao;Yu Zhou;H. Peng;Zhongfan Liu
一种简单的和可扩展的共偏析方法用于从含B和N的金属生长六方氮化硼（h-BN）薄膜。通过对夹层金属衬底进行真空退火，成功地制备了亚单层h-BN薄片、单层h-BN薄膜和不同厚度的多层h-BN薄膜。这种方法遵循一个下生长模式，并表现出良好的厚度和位置控制。
A facile and scalable co-segregation method is used to grow hexagonal boron nitride (h-BN) thin films from B- and N-containing metals. By annealing the sandwiched metal substrates in vacuum, sub-monolayer h-BN flakes, monolayer h-BN films, and multilayer h-BN thin films of varying thickness are successfully prepared. This approach follows an underneath-growth mode and exhibits good thickness- and location-control.