Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices
Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices
复制标题
用于电压可调自旋电子器件的包含重金属和磁绝缘体的双层系统中界面磁性的离子调制
DOI:
10.1002/adma.201802902
复制
发表时间:
2018-10-04
影响因子:
29.4
通讯作者:
Liu, Ming
中科院分区:
文献类型:
--
作者:
Guan, Mengmeng;Wang, Lei;Liu, Ming
The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high-speed response, and energy efficiency, it can be used for various spintronic applications, including spin-Hall, spin-pumping, and spin-Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited capping platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage-induced ferromagnetic ordering, caused by uncompensated d-orbital electrons in the Pt metal layer. Confirmed by first-principle calculations, this finding paves the way for novel voltage-tunable YIG-based spintronics.