Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
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DOI：
10.1063/1.123727
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发表时间：
1999-04-05
影响因子：
4
通讯作者：
Jancu, JM
中科院分区：
文献类型：
--
作者：
Della Sala, F;Di Carlo, A;Jancu, JM
采用自洽紧密结合的方法研究了纤锌矿GaN/InGaN量子阱激光器中宏观极化场的自由载流子筛选。我们发现在氮化激光结构中实验发现的高载流子浓度有效地屏蔽了内置的自发和压电极化场，从而诱导了“无场”的能带剖面。我们的研究结果解释了一些迄今为止令人困惑的氮化激光实验数据，如异常高的激光激发阈值和随着激发水平的增加而发射的蓝移。(C) 1999年美国物理研究所。[s0003 - 6951(99) 00314 - 9]。
The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum well lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a "field-free'' band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue shifts for increasing excitation levels. (C) 1999 American Institute of Physics. [S0003-6951(99)00314-9].