Weak localization scattering lengths in epitaxial, and CVD graphene
Weak localization scattering lengths in epitaxial, and CVD graphene
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DOI：
10.1103/physrevb.86.235441
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发表时间：
2012-12-26
影响因子：
3.7
通讯作者：
Nicholas, R. J.
中科院分区：
文献类型：
--
作者：
Baker, A. M. R.;Alexander-Webber, J. A.;Nicholas, R. J.
在1×10(11)cm(-2)到1.43×10(13)cm(-2)的范围内，用外延生长和CVD生长的方法研究了在石墨烯中的微弱局域化。理论上很好地拟合了磁场依赖的弱局域化，并用它分析了L-Phi、L-i和L-*的散射长度与载流子密度的关系。我们发现L-Phi没有明显的载流子依赖关系，L-i的载流子密度随载流子密度的增加略有下降，仅超过一个大的标准误差，而L-*的n(-1/4)依赖关系。我们证明，在较小的器件中需要低至0.01nA的电流，以避免在测量电导率的量子修正时出现热电子伪影。DOI：10.1103/PhysRevB.86.235441
Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. DOI: 10.1103/PhysRevB.86.235441