Growth and Charaterization of Short Period InAs/GaSb Superlattices Photoconductors
Growth and Charaterization of Short Period InAs/GaSb Superlattices Photoconductors
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发表时间：
2008
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通讯作者：
Jie Guo;Wei-guo Sun;Ying-qiang Xu;Zhiqiang Zhou;Zhichuan Niu
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作者：
Jie Guo;Wei-guo Sun;Ying-qiang Xu;Zhiqiang Zhou;Zhichuan Niu
采用分子束外延技术在半绝缘GaAs衬底上生长了短周期II型超晶格InAs（2 ML）/ GaSb（8 ML）和InAs（8 ML）/ GaSb（8 ML）的中、短波长红外探测器。生长界面失配模式的AlSb量子点层和厚GaSb层作为缓冲层。室温光透射谱显示出明显的吸收边在0.2 μm和0.5 μm。在77 K下，两种光电导体的光响应的50%截止波长分别为2.1μm和5.05μm。黑体探测率在77 K时超过2× 108 cmHz 1/2 /W，室温时超过1× 108 cmHz 1/2 /W，偏压为8V/cm。
The short- and mid-wavelength infrared detectors based on short period type II superlattices (SLs) InAs (2ML) / GaSb (8ML) and InAs (8ML) / GaSb (8ML) were grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer were grown as buffer layers. Room-temperature optical transmittance spectra showed clear absorption edge at ∼2μm and ∼5μm. The 50% cutoff wavelength of the two photoconductors was 2.1μm and 5.05μm in photoresponse at 77K respectively. The blackbody detectivity was beyond 2×10 8 cmHz 1/2 /W at 77K and 1×10 8 cmHz 1/2 /W at room temperature with 8 V/cm bias.