Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric
Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric
复制标题
高 k 栅极电介质纳米级 MOSFET 断态漏电流特性及机理分析
DOI：
10.1088/0256-307x/29/12/127301
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发表时间：
2012
影响因子：
3.5
通讯作者：
Ma Fei
中科院分区：
文献类型：
--
作者：
Liu Hong-Xia;Ma Fei
The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components: the gate leakage current, the source leakage current, and the substrate leakage current. The influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated separately. For nanoscale devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current.
