Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
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DOI：
10.1063/1.1530729
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发表时间：
2003-02-01
影响因子：
3.2
通讯作者：
Jogai, B
中科院分区：
文献类型：
--
作者：
Jogai, B
采用电荷控制模型对AlGaN/GaN异质结场效应晶体管（HFET）中电子向二维电子气（2DEG）的转移进行了理论研究。该模型是基于自洽的解决方案的泊松，薛定谔，电荷平衡方程，以及k.p哈密顿的价带状态。施加现实的表面边界条件，并使用费米-狄拉克统计的表面状态。基于表面供体是2DEG的根本原因的假设，可以解释关于2DEG的广泛的公开数据。例如，可以解释2DEG密度随AlGaN层厚度和摩尔分数的变化，沿着解释其他实验结果，例如当HFET被GaN层覆盖时2DEG密度的降低、厚GaN覆盖层的2DEG密度的饱和以及当表面被钝化时2DEG密度的增加。(C)2003年，美国物理学会。[DOI：10.1063/1.1530729]。
The electron transfer into the two-dimensional electron gas (2DEG) of AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically using a charge-control model. The model is based on a self-consistent solution of the Poisson, Schrodinger, and charge balance equations, together with the k.p Hamiltonian for the valence band states. Realistic surface boundary conditions are imposed, and surface states are included using Fermi-Dirac statistics. Based on the assumption that surface donors are the underlying cause of the 2DEG, a wide range of published data on the 2DEG can be explained. For instance, the variation of the 2DEG density with the AlGaN layer thickness and mole fraction can be accounted for, along with other experimental results, such as the reduction of the 2DEG density when the HFET is capped with a GaN layer, the saturation of the 2DEG density for thick GaN caps, and the increase in the 2DEG density when the surface is passivated. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1530729].