Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment
Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment
复制标题
DOI：
10.1016/j.apsusc.2014.12.038
复制
发表时间：
2015-02-15
影响因子：
6.7
通讯作者：
Kopnarsk, Michael
中科院分区：
文献类型：
--
作者：
Barzen, Lars;Richter, Johannes;Kopnarsk, Michael
介绍了利用反射各向异性光谱（RAS）监测单晶半导体样品（反应性）离子蚀刻的实验结果。为了显示该技术的潜力，将在GaAs/AlxGa1-xAs多层样品蚀刻过程中收集的RAS信号与这些样品在分子束外延（MBE）生长过程中获得的RAS数据进行了比较。RIE-RAS光谱的变化可归因于材料成分的变化。目前的蚀刻深度可以监测精度至少降低到几十纳米-f。E.记录平均反射强度。(C) 2014 Elsevier b.v.版权所有
Experimental results on the application of reflectance anisotropy spectroscopy (RAS) to the monitoring of (reactive) ion etching of monocrystalline semiconductor samples are described. To show the potential of this technique RAS signals collected during etching of GaAs/AlxGa1-xAs multilayer samples are compared to RAS data obtained before during molecular-beam epitaxial (MBE) growth of these very samples. A change of the RIE-RAS spectrum can be attributed to a change of material composition. And the current etch depth can be monitored with an accuracy at least down to several tens of nanometers -f. e. by recording the average reflected intensity. (C) 2014 Elsevier B. V. All rights reserved.