Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
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DOI：
10.1143/jjap.44.7433
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发表时间：
2005-10
影响因子：
1.5
通讯作者：
K. Fujii;K. Kusakabe;K. Ohkawa
中科院分区：
文献类型：
--
作者：
K. Fujii;K. Kusakabe;K. Ohkawa
比较了InxGa1-xN(x=0.02和0.09)和GaN的光电化学性能。首次用Mott-Schottky图测定了InxGa1-xN的带边电势。使用In0.02Ga0.91N工作电极的对电极产气量是三个样品中最高的。据推测，工作光电极的带边电位和光吸收可能会影响气体产生效率。
The photoelectrochemical properties of InxGa1-xN (x=0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott–Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.