High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition
High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition
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高功率微波等离子体化学气相沉积法生长高品质硼掺杂同质外延金刚石
DOI：
10.1063/1.1805180
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发表时间：
2004
影响因子：
3.2
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
T. Teraji;K. Arima;H. Wada;T. Ito
通过高功率微波等离子体化学气相沉积（MPCVD）方法沉积了表面基本平坦的掺硼同质外延金刚石（100）薄膜。对于受体密度为 1.4×1018cm−3、生长速率为 3.5μm∕h 的样品，在 290K 时获得 1500cm2∕Vs，在 235K 时获得 2220cm2∕Vs 的霍尔迁移率。这些迁移率与通过标准低功率 MPCVD 方法生长的最高质量同质外延金刚石的迁移率相当，其中生长速率和载流子浓度分别是当前情况下获得的相应值的~1∕30 和 1∕5。这一事实证明，高功率MPCVD适合以相当高的生长速率沉积高质量、高载流子浓度的p型金刚石。
Boron-doped homoepitaxial diamond (100) films with substantially flat surface have been deposited by a high-power microwave-plasma chemical-vapor-deposition (MPCVD) method. Hall mobilities of 1500cm2∕Vs at 290K and 2220cm2∕Vs at 235K were attained for such a specimen with an acceptor density of 1.4×1018cm−3 grown at a growth rate of 3.5μm∕h. These mobilities are comparable with those of the highest quality homoepitaxial diamond grown by a standard low-power MPCVD method, where the growth rate and carrier concentration were, respectively, ∼1∕30 and 1∕5 of the corresponding values attained in the present case. This fact verifies that the high-power MPCVD is suitable for deposition of a high quality and high carrier-concentration p-type diamond at a reasonably high growth rate.