Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
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DOI：
10.1063/5.0188457
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发表时间：
2024-01
影响因子：
3.2
通讯作者：
Prajwal M. Laxmeesha;Tessa D. Tucker;R. Rai;Shuchen Li;M.-W. Yoo;Eric A. Stach;A. Hoffmann
中科院分区：
文献类型：
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作者：
Prajwal M. Laxmeesha;Tessa D. Tucker;R. Rai;Shuchen Li;M.-W. Yoo;Eric A. Stach;A. Hoffmann
二进制kagome化合物TMXN（T = Mn，Fe，Co; X = Sn，Ge; M：N = 3：1，3：2，1：1）引起了最近的兴趣由金属位置kagome晶格的几何形状产生。为了利用这些电子特征用于潜在的旋转型应用，需要高质量异质结构的生长。在这里，我们报告使用分子束外延对Al2O3底物上Fe/FESN和CO/FESN双层的合成，以实现元素铁磁金属和抗铁磁kagome金属之间的异质空间。使用高分辨率X射线衍射，反射高能电子衍射和电子显微镜的结构表征表明，FESN膜是平坦的和外延的。卢瑟福的反向散射光谱用于确认稳定FESN相的化学计量窗口，同时进行了传输和磁力测量测量，以验证膜中的金属性和磁性订购。观察到了交换偏见，证实了FESN层中抗磁性顺序的存在，为在Kagome异质结构中磁性的未来研究铺平了道路，并将这些材料的潜在整合到设备中。
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flatbands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high-quality heterostructures is required. Here, we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution x-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals that the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.