Impact of small-angle scattering on ballistic transport in quantum dots.
Impact of small-angle scattering on ballistic transport in quantum dots.
复制标题
小角度散射对量子点弹道输运的影响。
DOI:
10.1103/physrevlett.108.196807
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发表时间:
2012
影响因子:
8.6
通讯作者:
A. Micolich
中科院分区:
文献类型:
--
作者:
A. See;I. Pilgrim;B. Scannell;R. Montgomery;O. Klochan;A. Burke;M. Aagesen;P. Lindelof;I. Farrer;D. Ritchie;R. P. Taylor;A. Hamilton;A. Micolich
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for "ballistic" transport in quantum dots.