Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
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用于单光子雪崩二极管应用的厚硅基硅结构的外延生长优化
DOI:
10.1109/istdm.2014.6874639
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发表时间:
2014
期刊:
影响因子:
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通讯作者:
Allred P
中科院分区:
文献类型:
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作者:
Allred P