Liquid Precursor Route for Hetero‐epitaxy of Zr(Y)O2 Thin Films on (001) Cubic Zirconia
Liquid Precursor Route for Hetero‐epitaxy of Zr(Y)O2 Thin Films on (001) Cubic Zirconia
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(001) 立方氧化锆上 Zr(Y)O2 薄膜异质外延的液体前驱体路线
DOI：
10.1111/j.1151-2916.1993.tb03804.x
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发表时间：
1993
影响因子：
3.9
通讯作者：
J. Speck
中科院分区：
文献类型：
--
作者：
A. Seifert;F. Lange;J. Speck
在（100）立方氧化锆基片上外延生长了ZrO[sub 2]-3mol%Y [sub 2]O[sub 3]单晶薄膜。通过将乙酸锆/硝酸钇水溶液旋涂到立方氧化锆基底上并随后在1，100和1，400 ℃之间的温度下热处理来制备膜。电子衍射和暗场TEM观察表明，该膜具有四轴对称性，并由50-100 nm的变体组成，其c轴与三个衬底立方轴之一对齐。非松弛应变能的估计表明，这两个变种与他们的c[子t]-轴平行的基板/薄膜界面是积极有利的。
ZrO[sub 2]-3 mol% Y[sub 2]O[sub 3] single-crystal thin films with multiple variants were epitaxially formed on (100) cubic zirconia substrates. The films were prepared by spin-coating an aqueous zirconium acetate/yttrium nitrate solution onto the cubic zirconia substrates and subsequently heat-treated at temperatures between 1,100 and 1,400C. Electron diffraction and dark-field TEM observations showed that the film has tetragonal symmetry and consists of 50-100 nm variants with their c-axes aligned with one of the three substrate cube axes. Unrelaxed strain energy estimates indicate that the two variants with their c[sub t]-axis parallel to the substrate/thin film interface are energetically favorable.