Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
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适用于高压应用的采用横向 GaN-on-Si 技术的单片集成多级逆变器
DOI：
10.1109/csics.2015.7314516
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
O. Ambacher
中科院分区：
文献类型：
--
作者：
B. Weiss;R. Reiner;P. Waltereit;S. Muller;M. Wespel;R. Quay;O. Ambacher
本文报道了一种基于高压AlGaN/GaN-on-Si工艺的单片单相二极管钳位多电平(DCM)转换器的研制。电源芯片用作逆变器(DC/AC)以从DC链路产生三电平输出电压，以及整流器(AC/DC)以向DC链路提供所需的电压。详细介绍了该逆变器的应用范围、拓扑结构和设计。设计了Umax=+/-400V，Imax=5A的集成逆变器电路，并给出了单片器件性能的测试结果。
This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (DC/AC) to produce a three level output voltage from a DC link as well as a rectifier (AC/DC) to feed a DC link with a desired voltage. The application range, the topology, and the design of the inverter are presented in detail. The integrated inverter circuit is dimensioned for Umax = +/- 400 V and Imax = 5 A. Furthermore measurements of the performance of the single devices on the integrated chip are demonstrated.