Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers
Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers
复制标题
碳改性锗外延：用碳 Delta 层过滤螺纹位错
DOI：
10.1149/09301.0067ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
H.J. Osten
中科院分区：
文献类型：
--
作者：
Y. Barnscheidt;H.J. Osten
在这项工作中，我们报告的过滤线程位错在Si（001）衬底上外延生长的薄Ge层使用碳δ层。已经观察到，某些外延条件可以加强碳层处的螺旋位错的弯曲。部分位错在底层形成闭合环，导致缺陷减少的顶层。这种方法能够在Si（001）衬底上生长位错减少的薄Ge层。
In this work, we report on the filtering of threading dislocations in epitaxial growth of thin Ge layers on Si (001) substrates using carbon delta layers. It has been observed that certain epitaxial conditions can enforce the bending of threading dislocations at the carbon layers. Part of the dislocations form closed loops in the bottom layers resulting in defect-reduced top layers. This approach enables the fabrication of thin dislocation-reduced Ge layers grown on Si (001) substrates.