Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films
Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films
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DOI：
10.1088/0256-307x/37/1/017104
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发表时间：
2019-12
影响因子：
3.5
通讯作者：
Yequan Chen;Yongda Chen;Jiai Ning;Liming Chen;Wenzhuo Zhuang;Liang He;Rong Zhang;Yongbing Xu;Xuefeng Wang
中科院分区：
文献类型：
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作者：
Yequan Chen;Yongda Chen;Jiai Ning;Liming Chen;Wenzhuo Zhuang;Liang He;Rong Zhang;Yongbing Xu;Xuefeng Wang
具有大尺度薄膜形态的拓扑Weyl半金属WTe2在新一代自旋电子器件中具有广阔的应用前景。然而，由于化学性质的原因，抑制大规模WTe2薄膜中的缺陷状态仍然是一项艰巨的任务。通过后退火，我们显著改善了WTe2薄膜的结晶质量，并消除了薄膜中的Te空位。我们在WTe2薄膜中观察到明显的舒布尼科夫-德哈斯量子振荡。非平凡的贝里相可以通过朗道扇形图分析来揭示。当载流子密度为5 * 10^19 cm^-3和2 * 10^19 cm^-3时，WTe2薄膜的霍尔迁移率分别达到1245 cm2V-1s-1和1423 cm2V-1s-1。我们的工作为获得高质量的Weyl半金属薄膜提供了一条可行的途径，用于未来的拓扑量子器件应用。
Topological Weyl semimetal WTe2 with large-scale film form has a promising prospect for new-generation spintronic devices. However, it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical nature. Here, we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post annealing. We observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 films. The nontrivial Berry phase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe2 films can reach 1245 cm2V-1s-1 and 1423 cm2V-1s-1 for holes and electrons with the carrier density of 5 * 10^19 cm^-3 and 2 * 10^19 cm^-3, respectively. Our work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.