Wet-etching fabrication of multilayer GaAlAs/GaAs microtips for scanning near-field optical microscopy
Wet-etching fabrication of multilayer GaAlAs/GaAs microtips for scanning near-field optical microscopy
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DOI：
10.1007/pl00021124
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发表时间：
2000-08
期刊：
影响因子：
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通讯作者：
S. Khalfallah;C. Gorecki;J. Podlecki;M. Nishioka;H. Kawakatsu;Y. Arakawa
中科院分区：
文献类型：
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作者：
S. Khalfallah;C. Gorecki;J. Podlecki;M. Nishioka;H. Kawakatsu;Y. Arakawa
提出了用各向异性腐蚀法制备用于扫描近场光学显微镜(SNOM)的GaAlAs/GaAs多层微尖。在H3PO4：H2O2：H2O溶液中进行腐蚀，温度为10℃，得到了具有四个刻蚀面的金字塔形微尖，其顶端的曲率半径小于50 nm。
We propose to fabricate GaAlAs/GaAs multilayer microtips for scanning near-field optical microscopy (SNOM) using anisotropic etching. The etching was performed in a solution of H3PO4:H2O2:H2O operating at a temperature of 10 °C. We obtained pyramid-shaped microtips with four etched facets and with a radius of curvature at the apex that was lower than 50 nm.