The origin of opto-functional enhancement in ZnO/CuO nanoforest structure fabricated by submerged photosynthesis
The origin of opto-functional enhancement in ZnO/CuO nanoforest structure fabricated by submerged photosynthesis
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浸没光合作用制备的 ZnO/CuO 纳米森林结构光功能增强的起源
DOI：
10.1016/j.apmt.2021.101359
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发表时间：
2022
影响因子：
8.3
通讯作者：
Watanabe Seiichi
中科院分区：
文献类型：
--
作者：
Takahashi Yuki;Jeem Melbert;Zhang Lihua;Watanabe Seiichi
半导体异质纳米结构在实际工业应用中具有极大的兴趣。在这份报告中，我们展示了ZnO/CuO纳米森林（NFRs）的制作淹没式光电合成（G-SPSC）方法，利用光照射在纯水中没有添加剂。我们首次阐明了其增强的光学功能特性的起源。在异质外延界面上，ZnO（001）/CuO（001）面间存在着一定的连接，但沿着外延轴方向的晶格差异为13.62 - 28.15%。在富锌条件下形成的光致{110} ZnO表面的NFR在450 nm和650 nm处显示出光致发光，这是由于锌间隙（IZn）和氧空位（VO）。ZnCuO 2三元氧化物被发现。界面在650 - 700 nm处显示出显著的发射，在450 - 500 nm处显示出显著的吸收。基于STEM-VEELS谱和从头计算，Cu 3 p电子占据导致了界面吸收系数的2.0eV峰.特别是，一个界面偶极子下的界面诱导间隙状态（IFIGS）澄清，所造成的准缺陷反位锌（ZnO）。这导致了共格ZnO（001）/CuO（001）界面的无公度电荷密度（ICCD）。这是ZnO/CuO NFR的光学功能增强的起源，其中证明了在550 nm处的最大12%IPCE，与类似的NFR形态相比增加了20%。我们的研究结果为光电器件领域的新型异质外延纳米结构的制备提供了一种有前途的方法和策略。
Semiconductor hetero-nanostructures are of great interest for practical industry use. In this report, we demonstrated ZnO/CuO nanoforest (NFRs) fabricated by galvanic submerged photo-synthesis (G-SPSC) method, which utilizes light illumination in pure water without additives. For the first time, we elucidated the origin of its enhanced opto-functional properties. At the hetero-epitaxial interface, ZnO(001)/CuO(001) planes linkage were established, even though with 13.62 – 28.15% local lattice discrepancies along thecaxis. Formed under Zn rich condition and photo-induced {110} ZnO surface, the NFRs exhibited photoluminescence emissions at 450 nm and 650 nm, due to zinc interstitial (IZn) and oxygen vacancies (VO). Ternary oxide of ZnCuO2was discovered. The interface exhibited significant emission at 650 – 700 nm and absorbance at 450 – 500 nm. On the basis of STEM-VEELS spectra andab initiocalculations, electrons occupancy at Cu 3pwas responsible for 2.0 eV peak of the interface absorption coefficient. In particular, an interface dipole under interface-induced gap states (IFIGS) was clarified, caused by quasi defects zinc antisite (ZnO). This led to an incommensurate charge density (ICCD) for a coherent ZnO(001)/CuO(001) interface. This is the origin for the opto-functional enhancement of the ZnO/CuO NFRs, where a maximum 12% IPCE at 550 nm, a 20% increase from similar NFRs morphology was demonstrated. Our results indicated a promising method and strategy for novel hetero-epitaxial nanostructures fabrication in the field of optoelectrical devices.