Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material
Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material
复制标题
使用各向同性湿法蚀刻和使用蚀刻材料制造低损耗线波导来控制非晶硅的纳米级厚度
DOI：
10.1063/1.4729416
复制
发表时间：
2012
影响因子：
4
通讯作者：
Y. Sakakibara
中科院分区：
文献类型：
--
作者：
K. Furuya;Koichi Nakanishi;R. Takei;E. Omoda;Masao Suzuki;M. Okano;T. Kamei;M. Mori;Y. Sakakibara
通过光学反射光谱法半实时地原位监测有机碱性溶液的湿法蚀刻，以实现用于线波导的氢化非晶硅（a-Si:H）薄膜的高分辨率厚度控制。 a-Si:H 固有的各向同性结构产生的各向同性蚀刻导致表面粗糙度 <1nm 的均匀蚀刻。适中的蚀刻速率能够在室温下实现准确的终点检测，分辨率≤1nm。由蚀刻的a-Si:H膜制成的线波导具有1.2dB/cm的低传播损耗，几乎与未蚀刻的线波导相当。
Wet-etching with an organic alkaline solution was monitored in situ in semi-real time by optical reflection spectroscopy to achieve high resolution thickness control of hydrogenated amorphous silicon (a-Si:H) film for use in wire waveguides. Isotropic etching resulting from the intrinsic isotropic structure of a-Si:H led to uniform etching with a surface roughness of <1 nm. A moderate etching rate enabled accurate endpoint detection with a resolution of ≤1 nm at room temperature. A wire waveguide made of the etched a-Si:H film had a low propagation loss of 1.2 dB/cm, which was almost equivalent to that of an unetched one.