Low-VDD Operation of SRAM Synaptic Array for Implementing Ternary Neural Network
Low-VDD Operation of SRAM Synaptic Array for Implementing Ternary Neural Network
复制标题
用于实现三元神经网络的 SRAM 突触阵列的低 VDD 操作
DOI:
10.1109/tvlsi.2017.2727528
复制
发表时间:
2017
影响因子:
2.8
通讯作者:
Shimeng Yu
中科院分区:
文献类型:
--
作者:
Xiaoyu Sun;Rui Liu;Yi;Hsiao;Wei;Meng;Shimeng Yu
For Internet of Things (IoT) edge devices, it is very attractive to have the local sensemaking capability instead of sending all the data back to the cloud for information processing. For image pattern recognition, neuro-inspired machine learning algorithms have demonstrated enormous powerfulness. To effectively implement learning algorithms on-chip for IoT edge devices, on-chip synaptic memory architectures have been proposed to implement the key operations such as weighted-sum or matrix-vector multiplication. In this paper, we proposed a low-power design of static random access memory (SRAM) synaptic array for implementing a low-precision ternary neural network. We experimentally demonstrated that the supply voltage (VDD) of the SRAM array could be aggressively reduced to a level, where the SRAM cell is susceptible to bit failures. The testing results from 65-nm SRAM chips indicate that VDD could be reduced from the nominal 1–0.55 V (or 0.5 V) with a bit error rate ~0.23% (or ~1.56%), which only introduced ~0.08% (or ~1.68%) degradation in the classification accuracy. As a result, the power consumption could be reduced by more than <inline-formula> <tex-math notation="LaTeX">$8\times $ </tex-math></inline-formula> (or <inline-formula> <tex-math notation="LaTeX">$10\times $ </tex-math></inline-formula>).