High sensitivity (1 ppm) hydrogen detection using an unconventional Pd/n-InP Schottky device.
High sensitivity (1 ppm) hydrogen detection using an unconventional Pd/n-InP Schottky device.
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使用非常规 Pd/n-InP 肖特基器件进行高灵敏度 (1 ppm) 氢检测。
DOI：
10.1088/0953-8984/23/42/422201
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Feng L
中科院分区：
文献类型：
--
作者：
Feng L
氢检测使用Pd/n-InP肖特基二极管，其中细长的，非常薄的Pd电极是更大的电阻比下面的半导体衬底。四探针测量的设备电阻，作为氢浓度的函数，是通过只接触Pd电极，与1 ppm的灵敏度被实现。在氢暴露的设备电阻下降从一个初始的高值，单独的Pd电极的特性，到一个较低的值，由于氢诱导的肖特基势垒的降低，打开了InP衬底作为一个并行的载流通道。
Hydrogen is detected using a Pd/n-InP Schottky diode in which the elongated, very thin Pd electrode is of greater resistance than the underlying semiconductor substrate. Four-probe measurements of the device resistance, as a function of hydrogen concentration, are made by contacting only the Pd electrode, with a sensitivity of 1 ppm being achieved. On hydrogen exposure the device resistance drops from an initial high value, characteristic of the Pd electrode alone, to a lower value due to a hydrogen-induced lowering of the Schottky barrier that opens up the InP substrate as a parallel current carrying channel.