Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition
Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition
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DOI：
10.1063/1.4967188
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发表时间：
2016-11-07
影响因子：
4
通讯作者：
Shahrjerdi, Davood
中科院分区：
文献类型：
--
作者：
Alharbi, Abdullah;Shahrjerdi, Davood
我们展示了大单层二硫化钨（WS 2）（>200 μ m）的化学气相沉积。光致发光和拉曼光谱学提供了对薄片的结构和应变异质性的深入了解。我们观察到激子淬火在晶界处，起源于WS 2薄片的中心处的成核位点。顶栅WS 2晶体管的温度可变输运测量显示出明显的金属到绝缘体的转变。变程和热激活跳跃机制可以解释低温和中温下绝缘相中的载流子输运。器件的室温场效应电子迁移率高达48 cm（2）/V. s。迁移率随着温度的降低而增加，并在低于100 K时开始饱和，这可能是由于库仑散射或缺陷。出版社：AIP Publishing
We demonstrate chemical vapor deposition of large monolayer tungsten disulfide (WS2) (>200 mu m). Photoluminescence and Raman spectroscopy provide insight into the structural and strain heterogeneity of the flakes. We observe exciton quenching at grain boundaries that originate from the nucleation site at the center of the WS2 flakes. Temperature variable transport measurements of top-gated WS2 transistors show an apparent metal-to-insulator transition. Variable range and thermally activated hopping mechanisms can explain the carrier transport in the insulating phase at low and intermediate temperatures. The devices exhibit room-temperature field-effect electron mobility as high as 48 cm(2)/V.s. The mobility increases with decreasing temperature and begins to saturate at below 100 degrees K, possibly due to Coulomb scattering or defects. Published by AIP Publishing.