Carbon-assisted chemical vapor deposition of hexagonal boron nitride
Carbon-assisted chemical vapor deposition of hexagonal boron nitride
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DOI：
10.1088/2053-1583/aa74a5
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发表时间：
2017-06-01
期刊：
影响因子：
5.5
通讯作者：
Colombo, Luigi
中科院分区：
文献类型：
--
作者：
Ismach, Ariel;Chou, Harry;Colombo, Luigi
我们表明，在低压化学气相沉积（CVD）系统中，残留的氧气和/或空气在镍箔“外壳”上六方氮化硼（h-BN）薄膜的生长机制中起着至关重要的作用。通过形成中间氧化硼 (BOx) 相，然后通过碳源（无定形碳粉末或甲烷）对 BOx 进行热还原，从而形成单层和双层 h-N，从而在 Ni 箔表面上生长六方氮化硼薄膜。使用低能电子显微镜 (LEEM) 和衍射 (LEED) 绘制大面积的层数图；利用拉曼光谱、飞行时间二次离子质谱（ToF-SIMS）、X射线光电子能谱（XPS）和扫描隧道显微镜（STM）对超薄h-BN薄膜的结构和物理质量进行了表征。本文报道的生长过程有助于更好地理解和控制超薄 h-BN 薄膜的合成。
We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil 'enclosures'. Hexagonal-BN films grow on the Ni foil surface via the formation of an intermediate boric-oxide (BOx) phase followed by a thermal reduction of the BOx by a carbon source (either amorphous carbon powder or methane), leading to the formation of single-and bi-layer h-N. Low energy electron microscopy (LEEM) and diffraction (LEED) were used to map the number of layers over large areas; Raman spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the structure and physical quality of the ultra-thin h-BN film. The growth procedure reported here leads to a better understanding and control of the synthesis of ultra-thin h-BN films.